Threshold energy of neutron-induced single event upset as a critical factor

IEEE International Reliability Physics Symposium Proceedings

Volumn 2004-January, Issue January, 2004, Pages 669-670

  Yahagi, Y ^a   Ibe, E ^a   Takahashi, Y ^b   Saito, Y ^b   Eto, A ^b   Sato, M ^b   Kameyama, H ^c   Hidaka, M ^d   Terunuma, K ^e   Nunomiya, T ^e   Nakamura, T ^e  

^a HITACHI LTD   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

^c IAV Co Ltd   (Japan)

^d Elpida Memory Inc   (Japan)

^e TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIGITAL STORAGE; RADIATION HARDENING; SEMICONDUCTOR DEVICES;

ACCELERATED TESTS; CRITICAL FACTORS; HIGH-ENERGY NEUTRON; PHYSICAL MODEL; SER ESTIMATIONS; SINGLE EVENT UPSETS; SOFT ERROR RATE; THRESHOLD ENERGY;

NEUTRONS;

EID: 84932129779     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2004.1315443     Document Type: Conference Paper

References (8)

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7. M. Baba, M. Takada, T. Iwasaki, S, Matsuyama, T. Nakamura, H. Ohguchi, T. Nakao, T. Sanami and N. Hirakawa, "Development of Monoenergetic Neutron Calibration Fields between 8 KeV and 15 MeV, " Nucl. Sci. Eng., Vol, 124, No.2, pp. 228-242, 1996.
8. http://wwwndc.tokai.jaeri.gojp/jendl/j33/J33-J.html