Effects of chirality and diameter on the transport properties of semiconducting carbon nanotubes

Journal of Applied Physics

Volumn 102, Issue 3, 2007, Pages

  Kauser, M Z ^a   Ruden, P P ^a  

^a University of Minnesota

Author keywords

[No Author keywords available]

Indexed keywords

BOLTZMANN EQUATION; CHIRALITY; ELECTRON TRANSPORT PROPERTIES; MONTE CARLO METHODS; SEMICONDUCTOR DEVICES;

BOLTZMANN'S TRANSPORT EQUATION; ZIGZAG CARBON NANOTUBE GROUPS;

CARBON NANOTUBES;

EID: 34548093447     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2767224     Document Type: Article

References (23)

1. A. P. Graham, Appl. Phys. A: Mater. Sci. Process. 80, 1141 (2005).
2. J. A. Misewich, R. Martel, P. Avouris, J. C. Tsang, S. Heinze, and J. Tersoff, Science 300, 783 (2003).
3. R. Saito, M. S. Dresselhaus, and G. Dresselhaus, Physical Properties of Carbon Nanotubes (Imperial College Press, London, 1998).
4. V. Perebeinos, J. Tersoff, and P. Avouris, Phys. Rev. Lett. 94, 086802 (2005).
5. G. Pennington and N. Goldsman, Phys. Rev. B 68, 045426 (2003).
6. A. Verma, M. Z. Kauser, and P. P. Ruden, J. Appl. Phys. 97, 114319 (2005).
7. A. Verma, M. Z. Kauser, and P. P. Ruden, Appl. Phys. Lett. 87, 123101 (2005).
8. M. Z. Kauser, A. Verma, and P. P. Ruden, Physica E (Amsterdam) 34, 666 (2006).
9. M. Z. Kauser, A. Verma, and P. P. Ruden, Mater. Res. Soc. Symp. Proc. 922E, 0922-U07-50 (2006).
10. M. Z. Kauser and P. P. Ruden, Appl. Phys. Lett. 89, 162104 (2006).
11. M. Lazzeri, S. Piscanec, F. Mauri, A. C. Ferrari, and J. Robertson, Phys. Rev. Lett. 95, 236802 (2005).
12. L. Yang, M. P. Anatram, J. Han, and J. P. Lu, Phys. Rev. B 60, 13874 (1999).
13. R. Martel, V. Derycke, C. Lavoie, J. Appenzeller, K. K. Chan, J. Tersoff, and Ph. Avouris, Phys. Rev. Lett. 87, 256805 (2001).
14. M. Lundstrom, Fundamental of Carier Transport, Modular Series on Solid State Devices Vol. X, edited by, G. W. Neudeck, and, R. F. Pierret, (Addison-Wesley, New York, 1992).
15. D. L. Rode, Low-field Transport in Semiconductors, Semiconductors and Semimetals Vol. 10, edited by, R. K. Willardson, and, A. C. Beer, (Academic, New York, 1975).
16. P. L. McEuen, M. S. Fuhrer, and H. Park, IEEE Trans. Nanotechnol. 1, 78 (2002).
17. X. Zhou, J. Y. Park, S. Huang, J. Liu, and P. L. McEuen, Phys. Rev. Lett. 95, 146805 (2005).
18. F. M. Peeters, W. V. Puymbroeck, and J. T. Devreese, Phys. Rev. B 31, 5322 (1985).
19. M. Zheng, A. Jagota, E. D. Semke, B. A. Diner, R. S. McLean, S. R. Lusting, R. E. Richardson, and N. G. Tassi, Nat. Mater. 2, 338 (2003).
20. R. Krupke, F. Hennrich, H. B. Weber, M. M. Kappes, and H. v. Löhneysen, Nano Lett. 3, 1019 (2003).
21. H. Kataura, Y. Kumazawa, Y. Maniwa, Y. Ohtsuka, R. Sen, S. Suzuki, and Y. Achiba, Carbon 38, 1691 (2000).
22. S. Farhat, M. L. de La Chapelle, A. Loiseau, C. D. Scott, S. Lefrant, C. Journet, and P. Bernier, J. Chem. Phys. 115, 6752 (2001).
23. J. Goo-Hwan, S. Suzuki, Y. Kobayashi, A. Yamazaki, H. Yoshimura, and Y. Homma, Appl. Phys. Lett. 90, 043108 (2007).