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Volumn 1, Issue 3, 2007, Pages 304-308

Synthesis of silicon carbide nanowires by solid phase source chemical vapor deposition

Author keywords

Chemical vapor deposition (CVD); Nanowires; Silicon carbide (SiC)

Indexed keywords


EID: 34548088832     PISSN: 16737377     EISSN: 16737482     Source Type: Journal    
DOI: 10.1007/s11706-007-0055-4     Document Type: Article
Times cited : (10)

References (23)
  • 1
    • 0001004115 scopus 로고
    • Production of fine, high-purity beta silicon carbide powders
    • 1
    • Krstic V D. Production of fine, high-purity beta silicon carbide powders. Journal of the American Ceramic Society, 1992, 75(1): 170-174
    • (1992) Journal of the American Ceramic Society , vol.75 , pp. 170-174
    • Krstic, V.D.1
  • 2
    • 34548074088 scopus 로고
    • Low-temperature growth of SiC thin films on Si and 6H-SiC by solid-source molecular beam epitaxy
    • 23
    • Fissel A, Schroter B, Richter W. Low-temperature growth of SiC thin films on Si and 6H-SiC by solid-source molecular beam epitaxy. Applied Physics Letters, 1995, 66(23): 3,182-3,184
    • (1995) Applied Physics Letters , vol.66 , pp. 3
    • Fissel, A.1    Schroter, B.2    Richter, W.3
  • 3
    • 0030800875 scopus 로고    scopus 로고
    • Nanobeam mechanics: Elasticity, strength, and toughness of nanorods and nonotubes
    • Wong E W, Sheehan P E, Lieber C M. Nanobeam mechanics: Elasticity, strength, and toughness of nanorods and nonotubes. Science, 1997, 277: 1,971-1,975
    • (1997) Science , vol.277 , pp. 1
    • Wong, E.W.1    Sheehan, P.E.2    Lieber, C.M.3
  • 4
    • 0034247955 scopus 로고    scopus 로고
    • Oriented silicon carbide nanowires: Synthesis and field emission properties
    • 16
    • Pan Z W, Lai H L, Au F C K, et al. Oriented silicon carbide nanowires: Synthesis and field emission properties. Advanced Materials, 2000, 12(16): 1,186-1,190
    • (2000) Advanced Materials , vol.12 , pp. 1
    • Pan, Z.W.1    Lai, H.L.2    Au, F.C.K.3
  • 5
    • 0001467969 scopus 로고    scopus 로고
    • Field-emission characteristics of SiC nanowires prepared by chemical-vapor deposition
    • 19
    • Wong K W, Zhou X T, Au F C K, et al. Field-emission characteristics of SiC nanowires prepared by chemical-vapor deposition. Applied Physics Letters, 1999, 75(19): 2,918-2,920
    • (1999) Applied Physics Letters , vol.75 , pp. 2
    • Wong, K.W.1    Zhou, X.T.2    Au, F.C.K.3
  • 6
    • 0029321505 scopus 로고
    • Synthesis and characterization of carbide nanorods
    • Dai H J, Wong E W, Lu Y Z, et al. Synthesis and characterization of carbide nanorods. Nature, 1995, 375: 769-772
    • (1995) Nature , vol.375 , pp. 769-772
    • Dai, H.J.1    Wong, E.W.2    Lu, Y.Z.3
  • 7
    • 0031557015 scopus 로고    scopus 로고
    • Continuous synthesis and characterization of silicon carbide nanorods
    • 3-5
    • Han W Q, Fan S S, Li Q Q, et al. Continuous synthesis and characterization of silicon carbide nanorods. Chemical Physics Letters, 1997, 265(3-5): 374-378
    • (1997) Chemical Physics Letters , vol.265 , pp. 374-378
    • Han, W.Q.1    Fan, S.S.2    Li, Q.Q.3
  • 8
    • 0037021525 scopus 로고    scopus 로고
    • Formation of silicon carbide nanotubes and nanowires via reaction of silicon (from disproportionation of silicon monoxide) with carbon nanotubes
    • 48
    • Sun X H, Li C P, Wong W K, et al. Formation of silicon carbide nanotubes and nanowires via reaction of silicon (from disproportionation of silicon monoxide) with carbon nanotubes. Journal of the American Chemical Society, 2002, 124(48): 14,464-14,471
    • (2002) Journal of the American Chemical Society , vol.124 , pp. 14
    • Sun, X.H.1    Li, C.P.2    Wong, W.K.3
  • 11
    • 0000367378 scopus 로고    scopus 로고
    • β-SiC nanorods synthesized by hot filament chemical vapor deposition
    • 26
    • Zhou X T, Wang N, Lai H L, et al. β-SiC nanorods synthesized by hot filament chemical vapor deposition. Applied Physics Letters, 1999, 74(26): 3,942-3,944
    • (1999) Applied Physics Letters , vol.74 , pp. 3
    • Zhou, X.T.1    Wang, N.2    Lai, H.L.3
  • 12
    • 79956047188 scopus 로고    scopus 로고
    • Needle-shaped silicon carbide nanowires: Synthesis and field electron emission properties
    • 20
    • Wu Z S, Deng S Z, Xu N S, et al. Needle-shaped silicon carbide nanowires: Synthesis and field electron emission properties. Applied Physics Letters, 2002, 80(20): 3,829-3,831
    • (2002) Applied Physics Letters , vol.80 , pp. 3
    • Wu, Z.S.1    Deng, S.Z.2    Xu, N.S.3
  • 13
    • 0032614579 scopus 로고    scopus 로고
    • Growth of SiC nanorods at low temperature
    • 4
    • Lu Q Y, Hu J Q, Tang K B, et al. Growth of SiC nanorods at low temperature. Applied Physics Letters, 1999, 75(4): 507-509
    • (1999) Applied Physics Letters , vol.75 , pp. 507-509
    • Lu, Q.Y.1    Hu, J.Q.2    Tang, K.B.3
  • 15
    • 8744310107 scopus 로고    scopus 로고
    • Growth and characterization of silicon carbide nanowires
    • 4-5
    • Park B, Ryu Y, Yong K. Growth and characterization of silicon carbide nanowires. Surface Review and Letters, 2004, 11(4-5): 373-378
    • (2004) Surface Review and Letters , vol.11 , pp. 373-378
    • Park, B.1    Ryu, Y.2    Yong, K.3
  • 17
    • 33845468883 scopus 로고    scopus 로고
    • Direct synthesis of SiC nanowires by multiple reaction VS growth
    • 1
    • Du X W, Zhao X, Jia S L, et al. Direct synthesis of SiC nanowires by multiple reaction VS growth. Materials Science and Engineering: B, 2007, 136(1): 72-77
    • (2007) Materials Science and Engineering: B , vol.136 , pp. 72-77
    • Du, X.W.1    Zhao, X.2    Jia, S.L.3
  • 18
    • 11044231008 scopus 로고    scopus 로고
    • Nanocantilevers made of bent silicon carbide nanowire-in-silicon oxide nanocones
    • 22
    • Lin M, Loh K P, Boothroyd C, et al. Nanocantilevers made of bent silicon carbide nanowire-in-silicon oxide nanocones. Applied Physics Letters, 2004, 85(22): 5,388-5,390
    • (2004) Applied Physics Letters , vol.85 , pp. 5
    • Lin, M.1    Loh, K.P.2    Boothroyd, C.3
  • 19
    • 4444343090 scopus 로고    scopus 로고
    • Optical and electrical transport properties in silicon carbide nanowires
    • 7
    • Seong H K, Choi H J, Lee S K, et al. Optical and electrical transport properties in silicon carbide nanowires. Applied Physics Letters, 2004, 85(7): 1,256-1,258
    • (2004) Applied Physics Letters , vol.85 , pp. 1
    • Seong, H.K.1    Choi, H.J.2    Lee, S.K.3
  • 20
    • 33751564339 scopus 로고    scopus 로고
    • Simple approach to beta-SiC nanowires: Synthesis, optical, and electrical properties
    • No. 223124
    • Zhou W M, Liu X, Zhang Y F. Simple approach to beta-SiC nanowires: Synthesis, optical, and electrical properties. Applied Physics Letters, 2006, 89: No. 223124
    • (2006) Applied Physics Letters , vol.89
    • Zhou, W.M.1    Liu, X.2    Zhang, Y.F.3
  • 21
    • 33748756338 scopus 로고    scopus 로고
    • Synthesis of silicon carbide nanowires by CVD without using a metallic catalyst
    • 1
    • Fu Q-G, Li H-J, Shi X-H, et al. Synthesis of silicon carbide nanowires by CVD without using a metallic catalyst. Materials Chemistry and Physics, 2006, 100(1): 108-111
    • (2006) Materials Chemistry and Physics , vol.100 , pp. 108-111
    • Fu, Q.-G.1    Li, H.-J.2    Shi, X.-H.3
  • 22
    • 33751122778 scopus 로고
    • Vapor-Liquid-Solid mechanism of single crystal growth
    • 5
    • Wagner R S, Ellis W C. Vapor-Liquid-Solid mechanism of single crystal growth. Applied Physics Letters, 1964, 4(5): 89-90
    • (1964) Applied Physics Letters , vol.4 , pp. 89-90
    • Wagner, R.S.1    Ellis, W.C.2
  • 23
    • 7544230752 scopus 로고    scopus 로고
    • Self-assembled growth of coaxial crystalline nanowires
    • 10
    • Ho G W, Wong A S W, Wee A T S, et al. Self-assembled growth of coaxial crystalline nanowires. Nano Letters, 2004, 4(10): 2,023-2,026
    • (2004) Nano Letters , vol.4 , pp. 2
    • Ho, G.W.1    Wong, A.S.W.2    Wee, A.T.S.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.