Effects of ambient gases on the direct growth of SiC nanowires by a simple heating method

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 5, 2005, Pages 2069-2072

  Ryu, Yonghwan ^a   Yong, Kijung ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; COATINGS; HEATING; MATHEMATICAL MODELS; MORPHOLOGY; SILICON CARBIDE;

AMBIENT GASES; NANOWIRES; SI SUBSTRATES;

NANOSTRUCTURED MATERIALS;

EID: 31144462268     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2050667     Document Type: Article

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