Internal strain of self-assembled inxGa1-xAs quantum dots calculated to realize transverse-magnetic-mode-sensitive interband optical transition at wavelengths of 1.5 μm bands

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 8, 2005, Pages 6312-6316

  Ebe, Hiroji ^a,b   Uetake, Ayahito ^c,d   Akiyama, Tomoyuki ^c,d   Kawaguchi, Kenichi ^c,d   Ekawa, Mitsuru ^c,d   Kuramata, Akito ^c,d   Nakata, Yoshiaki ^c,d   Sugawara, Mitsuru ^a,b   Arakawa, Yasuhiko ^a,b,e  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c FUJITSU LABORATORIES LTD   (Japan)

^d Optoelectronic Industry and Technology Development Association   (Japan)

^e UNIVERSITY OF TOKYO   (Japan)

Author keywords

Optical amplifier; Polarization; Quantum dot; Strain; TM mode

Indexed keywords

INDIUM COMPOUNDS; LIGHT AMPLIFIERS; POLARIZATION; SELF ASSEMBLY; SEMICONDUCTOR QUANTUM DOTS; STRAIN MEASUREMENT;

OPTICAL TRANSITION; TM MODE;

GALLIUM COMPOUNDS;

EID: 31544446317     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.6312     Document Type: Article

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