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Volumn , Issue , 2004, Pages 36-41
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Test results of Total Ionizing Dose conducted at the Jet Propulsion Laboratory
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Author keywords
Bipolar; Complementary Metal Oxide Semiconductors (CMOS); Enhanced Low Dose Rate Sensitivity (ELDRS); High Dose Level (HDL); Low Dose Level (LDL); Total Ionizing Dose (TID)
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Indexed keywords
ELECTRIC POTENTIAL;
FAILURE ANALYSIS;
GAMMA RAYS;
IONIZING RADIATION;
JUNCTION GATE FIELD EFFECT TRANSISTORS;
MICROELECTRONICS;
SEMICONDUCTOR MATERIALS;
SENSITIVITY ANALYSIS;
SPACE APPLICATIONS;
THERMOMETERS;
BIPOLAR;
COMPLEMENTARY METAL OXIDE SEMICONDUCTORS (CMOC);
ENHANCED LOW RATE SENSITIVITY (ELDRS);
HIGH DOSE LEVEL (HDL);
LOW DOSE LEVEL (LDL);
TOTAL IONIZING DOSE (TID);
ELECTRONIC EQUIPMENT TESTING;
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EID: 17644395937
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (5)
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References (6)
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