Plasma enhanced chemical vapor deposition of silicon under relatively high pressure conditions

IEEE Transactions on Plasma Science

Volumn 33, Issue 2 I, 2005, Pages 372-373

  Amanatides, E ^a   Lykas, B ^a   Mataras, D ^a  

^a UNIVERSITY OF PATRAS   (Greece)

Author keywords

Microcrystalline silicon; Plasma enhanced chemical vapor deposition; Radio frequency discharges; Self consistent modeling; Silane; Solar cells

Indexed keywords

CARRIER CONCENTRATION; CRYSTALLINE MATERIALS; GLOW DISCHARGES; GROWTH (MATERIALS); HIGH PRESSURE EFFECTS; HYDROGEN; MATHEMATICAL MODELS; SILANES; SILICON; SOLAR CELLS; THIN FILMS; VOLUME FRACTION;

MICROCRYSTALLINE SILICON; RADIO FREQUENCY DISCHARGES; SELF CONSISTENT MODELING;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 18844462691     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPS.2005.845308     Document Type: Article

References (4)

1. T. Roschek, T. Repmann, J. Müller, B. Rech, and H. Wagner, "Comprehensive study of microcrystalline silicon solar cells deposited at high rate using 13.56 MHz plasma-enhanced chemical vapor deposition," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 20, no. 2, pp. 492-498, Mar. 2002.
2. M. Kondo, M. Fukawa, L. Guo, and A. Matsuda, "High rate growth of microcrystalline silicon at low temperatures," J. Non-Cryst. Solids, vol. 266-269, pp. 84-89, May 2000.
3. B. Lyka, E. Amanatides, and D. Mataras, "2D self-consistent modeling of microcrystalline silicon deposition process," presented at the 19th Eur. PV Solar Energy Conf. (EPVSEC), Paris, France, 2004.
4. E. Amanatides, S. Stamou, and D. Mataras, "Gas-phase and surface kinetics in plasma enhanced chemical vapor deposition of microcrystalline silicon," J. Appl. Phys., vol. 90, pp. 5786-5797, Dec. 2001.