|
Volumn 588, Issue , 2000, Pages 117-122
|
Study of the radiative and non-radiative recombination processes at dislocations in silicon by photoluminescence and LBIC measurements
a a a a |
Author keywords
[No Author keywords available]
|
Indexed keywords
CRYOSTATS;
CRYSTAL GROWTH FROM MELT;
DISLOCATIONS (CRYSTALS);
ELECTRON ENERGY LEVELS;
MONOCHROMATORS;
NUCLEATION;
PHOTOLUMINESCENCE;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SEMICONDUCTOR LASERS;
DISLOCATION DENSITY;
DISLOCATION RELATED LUMINESCENCE;
LIGHT BEAM INDUCED CURRENT;
NONRADIATIVE RECOMBINATION PROCESS;
RADIATIVE RECOMBINATION PROCESS;
SURFACE PHOTOVOLTAGE METHOD;
SILICON WAFERS;
|
EID: 0033690189
PISSN: 02729172
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
Times cited : (10)
|
References (17)
|