Field-effect transistor with deposited graphite thin film

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 4 B, 2007, Pages 2615-2617

  Inokawa, Hiroshi ^a   Nagase, Masao ^b   Hirono, Shigeru ^c   Goto, Touichiro ^b   Yamaguchi, Hiroshi ^b   Torimitsu, Keiichi ^b  

^a SHIZUOKA UNIVERSITY   (Japan)

^b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^c NTT CORPORATION   (Japan)

Author keywords

Electron cyclotron resonance (ECR) sputtering; Field effect transistor (FET); Graphite

Indexed keywords

ELECTRON CYCLOTRON RESONANCE; FILM THICKNESS; GRAPHITE; NANOCRYSTALLITES; THIN FILMS;

AMBIPOLAR FIELD EFFECTS; CARBON NANOCRYSTALLITE THIN FILMS; ELECTRON CYCLOTRON RESONANCE (ECR) SPUTTERING; FILM EDGE;

FIELD EFFECT TRANSISTORS;

EID: 34547910711     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.2615     Document Type: Article

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