Chemical beam epitaxy of GaAsN thin films with monomethylhydrazine as N source

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 5 A, 2007, Pages 2844-2847

  Nishimura, Kenichi ^a   Lee, Hae Seok ^a   Suzuki, Hidetoshi ^a   Ohshita, Yoshio ^a   Yamaguchi, Masafumi ^a  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

Author keywords

Chemical beam epitaxy; GaAs; GaAsN; Monomethylhydrazine; N composition

Indexed keywords

CHEMICAL BEAM EPITAXY; DESORPTION; NITROGEN; SEMICONDUCTING GALLIUM ARSENIDE; THIN FILMS;

MONOMETHYLHYDRAZINE; N COMPOSITION;

GALLIUM COMPOUNDS;

EID: 34547908511     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.2844     Document Type: Article

References (19)

1. M. Kondow, K. Uomi, K. Hosomi, and T. Mozume: Jpn. J. Appl. Phys. 33 (1994) L1056.
2. S. R. Kurtz, D. Myers, and J. M. Olson: Proc. 26th IEEE Photovoltaic Specialists Conf., 1997, p. 875.
3. M. Weyers, M. Sato, and H. Ando: Jpn. J. Appl. Phys. 31 (1992) L853.
4. Z. Pan, L. H. Li, W. Zhang, Y. W. Lin, and R. H. Wu: Appl. Phys. Lett. 77 (2000) 214.
5. S. Zhongzhe, Y. S. Fatt, Y. K. Chuin, L. W. Khai, F. Weijun, W. Shanzhong, and N. T. Khee: J. Appl. Phys. 94 (2003) 1069.
6. A. Ougazzaden, Y. Le Bellego, E. V. K. Rao, M. Juhel, L. Leprince, and G. Patriarche: Appl. Phys. Lett. 70 (1997) 2861.
7. H. Dumont, L. Auvray, Y. Monteil, and J. Bouix: Mater. Sci. Eng. B 84 (2001) 258.
8. C. Jin, S. A. Nikishin, V. I. Kuchinskii, and H. Tmkin: J. Appl. Phys. 91 (2002) 56.
9. K. Uesugi and I. Suemune: J. Cryst. Growth 189-190 (1998) 490.
10. Y. Sun, M. Yamamori, T. Egawa, and H. Ishikawa: Jpn. J. Appl. Phys. 43 (2004) 2409.
11. A. J. Ptak, S. W. Johnston, S. Kurtz, D. J. Friedman, and W. K. Metzger: J. Cryst. Growth 251 (2003) 392.
12. W. M. McGee, P. A. Bone, R. S. Williams, and T. S. Jonesa: Appl. Phys. Lett. 87 (2005) 181905.
13. M. Yamaguchi, T. Warabisako, and H. Sugiura: J. Cryst. Growth 136 (1994) 29.
14. H. S. Lee, K. Nishimura, Y. Yagi, M. Tachibana, N. J. Ekins-Daukes, Y. Ohshita, N. Kojima, and M. Yamaguchi: J. Cryst. Growth 275 (2005) e1127.
15. K. Uesugi, N. Morooka, and I. Suemune: Appl. Phys. Lett. 74 (1999) 1254.
16. H. P. Klug and L. E. Alexander: X-ray Diffraction Procedures (Wiley, New York, 1974) p. 687.
17. K. Hamaoka, I. Suemune, K. Fujii, T. Koui, A. Kishimoto, and M. Yamanishi: Jpn. J. Appl, Phys. 30 (1991) L1579.
18. H. Suzuki, K. Nishimura, H. S. Lee, Y. Ohshita, N. Kojima, and M. Yamaguchi: Thin Solid Films 515 (2007) 5008.
19. H. Asahi, X. F. Liu, K. Inoue, D. Marx, K. Asami, K. Miki, and S. Gonda: J. Cryst. Growth 145 (1994) 668.