Effect of dead space on low-field avalanche multiplication in InP

IEEE Transactions on Electron Devices

Volumn 54, Issue 8, 2007, Pages 2051-2054

  Tan, L J J ^a   Ng, J S ^a   Tan, C H ^a   Hopkinson, M ^a   David, J P R ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Breakdown; Dead space; Heterojunction bipolar transistors; Impact ionization; Multiplication

Indexed keywords

AVALANCHE DIODES; ELECTRIC FIELDS; IMPACT IONIZATION; MATHEMATICAL MODELS; SEMICONDUCTING INDIUM PHOSPHIDE;

DEAD SPACE; LOCAL MODEL; LOW-FIELD AVALANCHE MULTIPLICATION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 34547885357     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.900010     Document Type: Article

References (13)

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