Carbon incorporation on (1̄01) facet of AlGaN in metal organic vapor phase epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 10 A, 2006, Pages 7655-7660

  Koide, Norikatsu ^a   Hikosaka, Toshiki ^a   Honda, Yoshio ^a   Yamaguchi, Masahito ^a   Sawaki, Nobuhiko ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

AlGaN; Carbon doping; MOVPE; Selective epitaxy

Indexed keywords

CARBON; CATHODOLUMINESCENCE; DOPING (ADDITIVES); METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES;

DONOR BOUND EXCITON (DBE); EMISSION INTENSITY; SELECTIVE EPITAXY; SOURCE MATERIALS;

ALUMINUM GALLIUM NITRIDE;

EID: 34547885052     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.7655     Document Type: Article

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