Fabrication of GaN/AlGaN heterostructures on a (1 1 1)Si substrate by selective MOVPE

Journal of Crystal Growth

Volumn 237-239, Issue 1-4 II, 2002, Pages 1099-1103

  Kato, Tomonobu ^a   Honda, Yoshio ^a   Yamaguchi, Masahito ^a   Sawaki, Nobuhiko ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

A2. Metal organic vapor phase epitaxy; A2. Quantum wells; B1. Gallium compounds; B1. Nitrides; B2. Semiconducting gallium compounds

Indexed keywords

CLADDING (COATING); ENERGY GAP; GALLIUM NITRIDE; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM WELLS; SPECTRUM ANALYSIS; SUBSTRATES;

TRUNCATED TRIANGULAR STRIPED STRUCTURES;

HETEROJUNCTIONS;

EID: 0036531079     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02098-X     Document Type: Article

References (9)