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Volumn 46, Issue 17-19, 2007, Pages

Effects of thin film interference on junction activation during sub-millisecond annealing

Author keywords

Millisecond annealing; Silicon on insulator; Thin film interference; Ultra shallow junction

Indexed keywords

ANNEALING; LIGHT ABSORPTION; RECRYSTALLIZATION (METALLURGY); SILICON ON INSULATOR TECHNOLOGY;

EID: 34547879267     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.L427     Document Type: Article
Times cited : (3)

References (13)
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    • 34547861369 scopus 로고    scopus 로고
    • T. Ito, T. Iinuma, A. Murakoshi, H. Akutsu, K. Suguro, T. Arikado, K. Okumura, M. Yoshioka, T. Owada, Y. Imaoka, H. Murayama, and T. Kusuda: Ext. Abstr. Solid State Devices and Materials, 2001, p. 182.
    • T. Ito, T. Iinuma, A. Murakoshi, H. Akutsu, K. Suguro, T. Arikado, K. Okumura, M. Yoshioka, T. Owada, Y. Imaoka, H. Murayama, and T. Kusuda: Ext. Abstr. Solid State Devices and Materials, 2001, p. 182.
  • 5
    • 0036136178 scopus 로고    scopus 로고
    • T. Gebel, M. Voelskow, W. Skorupa, G. Mannino, V. Privitera, F. Priolo, E. Napolitani, and A. Camera: Nucl. Instrum. Methods Phys. Res., Sect. B 186 (2002) 287.
    • T. Gebel, M. Voelskow, W. Skorupa, G. Mannino, V. Privitera, F. Priolo, E. Napolitani, and A. Camera: Nucl. Instrum. Methods Phys. Res., Sect. B 186 (2002) 287.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.