An investigation of species dependence in germanium pre-amorphized and laser thermal annealed ultra-shallow abrupt junctions

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 2000, Pages 182-185

  Murto, Robert ^a   Jones, Kevin ^b   Rendon, Michael ^c   Talwar, Somit ^d  

^a TEXAS INSTRUMENTS   (United States)

^b UNIVERSITY OF FLORIDA   (United States)

^c MOTOROLA INC   (United States)

^d Verdant Technologies   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS REGIONS; CMOS WAFERS; DOPANT SPECIES; FOUR-POINT PROBE; GERMANIUM IMPLANT; JUNCTION DEPTH; LASER ABSORPTION; LASER ENERGIES; LASER THERMAL; LASER THERMAL ANNEALING; LOW ENERGY IMPLANTATION; MELT DEPTH; N-TYPE DOPANTS; PRE-AMORPHIZED SILICON; PROCESS COMPLEXITY; PROCESS WINDOW; SECONDARY IONS; SILICON SURFACES; TEST EQUIPMENTS;

ARSENIC; BORON; BORON COMPOUNDS; GERMANIUM; ION IMPLANTATION; LASER HEATING; PHOSPHORUS; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS;

ANNEALING;

EID: 0005075383     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2000.924120     Document Type: Conference Paper

References (9)

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2. Semiconductor Industry Association, International Technology Roadmap for Semiconductors: 1999 Edition, Austin, TX: International SEMATECH, 1999.
3. R. Murto, M. Rendon and S. Talwar, "Activation and Deactivation Studies of Laser Thermal Annealed Boron, Arsenic, Phosphorus and Antimony Ultra-Shallow Abrupt Junctions," these proceedings.
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8. E. Jones and E. Ishida, "Shallow junction doping technologies for ULSI," Materials Science and Engineering, vol. R24, 1998, pp. 1-80
9. S. Talwar, "Laser thermal processing for shallow junction formation," presented at the 2000 Strategic Technology Symposium Asia Pacific: Future Directions for Silicon Transistor Processing, June 2000, unpublished.