Nanohole arrays with sub-30 nm diameter formed on GaAs using nanoporous alumina mask

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 7 A, 2007, Pages 4410-4412

  Jung, Mi ^a   Lee, Seok ^a   Jhon, Young Min ^a   Mho, Sun Il ^b   Cho, Jae Won ^c   Woo, Deokha ^a  

^a Korea Institute of Science and Technology   (South Korea)

^b Ajou University   (South Korea)

^c Kwangwoon University   (South Korea)

Author keywords

GaAs nanohole; Nanolithography; Nanoporous alumina mask

Indexed keywords

ALUMINA; ION BOMBARDMENT; NANOPORES; OXIDE FILMS; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM ARSENIDE;

GAAS NANOHOLE; NANOHOLE ARRAYS; NANOPOROUS ALUMINA MASK;

NANOSTRUCTURES;

EID: 34547850270     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.4410     Document Type: Article

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