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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 1479-1482

Fabrication of thick AlN film by low pressure hydride vapor phase epitaxy

(6) Liu, Yu Huai a Tanabe, Tomoaki a Miyake, Hideto a Hiramatsu, Kazumasa a Shibata, Tomohiko b Tanaka, Mutsuhiro b

a MIE UNIVERSITY (Japan)

b NGK INSULATORS LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FULL WIDTH HALF MAXIMUM (FWHM); HYDRIDE VAPOR PHASE EPITAXY; ROCKING CURVES; THICK ALN FILMS; 61.10.NZ; 68.37.HK; 68.55.JK; 81.05.EA; 81.15.KK;

ATOMIC FORCE MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SURFACE CHEMISTRY; THERMAL EFFECTS; THICK FILMS; VAPOR PHASE EPITAXY; X RAY DIFFRACTION; EPITAXIAL GROWTH; SEMICONDUCTING GALLIUM COMPOUNDS;

ALUMINUM NITRIDE; VAPORS;

EID: 33746340895 PISSN: 18626351 EISSN: None Source Type: Journal
DOI: 10.1002/pssc.200565355 Document Type: Conference Paper

Times cited : (6)

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