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Volumn 579, Issue 2 SPEC. ISS., 2007, Pages 821-827

Challenges and benefits of designing readout ASICs in advanced technologies

Author keywords

Application specific integrated circuits; CMOS scaling; Deep submicron CMOS processes; Front end electronics; Low noise design; Low voltage design; Radiation effects

Indexed keywords

CMOS INTEGRATED CIRCUITS; MOSFET DEVICES; OPTIMIZATION; RADIATION EFFECTS; SUBSTRATES;

EID: 34547817733     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2007.05.302     Document Type: Article
Times cited : (7)

References (16)
  • 8
    • 33750835393 scopus 로고    scopus 로고
    • J. Metcalfe, et al., Evaluation of radiation tolerance of SiGe heterojunction bipolar transistors under 24 GeV proton exposure, 2005 IEEE Nuclear Science Symposium Conference Record 2006, pp. 974.
  • 9
    • 34547780690 scopus 로고    scopus 로고
    • N.S. Kim, et al., IEEE Comput. (2003) 68.
  • 12
    • 84907709834 scopus 로고    scopus 로고
    • H.P. Tuinhout, Parametric mismatch and fluctuations on performance and yield of deep-submicron CMOS technologies, in: ESSDERC 2002, Proceedings of the 32nd European Solid-State Device Research Conferenece, 2002, 95.
  • 13
    • 34547805590 scopus 로고    scopus 로고
    • G. Darbo, et al., Outline of R&D activities for ATLAS at an upgraded LHC, Atlas Note, CERN_ATL-COM-GEN-2005-002.
  • 16
    • 34547729186 scopus 로고    scopus 로고
    • F. Facio, Radiation tolerance of commercial 130 nm CMOS technologies for high energy physics experiments, in: VI Front End Electronics Meeting, Perugia, 17-20 May 2006.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.