Evaluation of the radiation tolerance of SiGe heterojunction bipolar transistors under 24GeV proton exposure

IEEE Nuclear Science Symposium Conference Record

Volumn 2, Issue , 2005, Pages 974-977

  Metcalfe, J ^b   Dorfan, D E ^b   Grillo, A A ^b   Jones, A ^b   Mendoza, M ^b   Rogers, M ^b   Sadrozinski, H F W ^a,b   Seiden, A ^b   Spencer, E ^b   Wilder, M ^b   Cressler, J D ^c   Prakash, G ^c   Sutton, A ^c  

^a IEEE

^b UNIVERSITY OF CALIFORNIA SANTA CRUZ   (United States)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COLLIDING BEAM ACCELERATORS; INTEGRATED CIRCUITS; RADIATION DETECTORS; RADIATION HARDENING; SEMICONDUCTING SILICON COMPOUNDS; THERMAL EFFECTS;

LARGE HADRON COLLIDER (LHC); RADIATION TOLERANCE; SIGNAL LEVEL DISCRIMINATION; SILICON STRIP DETECTORS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 33750835393     PISSN: 10957863     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NSSMIC.2005.1596416     Document Type: Conference Paper

References (7)

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