Pulsed power switching of a 4 MM × 4 MM SIC thyristor

Digest of Technical Papers-IEEE International Pulsed Power Conference

Volumn , Issue , 2007, Pages 896-899

  O'Brien, Heather ^a   Shaheen, William ^a   Bayne, Stephen B ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER NETWORKS; ELECTRIC SWITCHGEAR; METHOD OF MOMENTS; MICROFLUIDICS; NONMETALS; RESEARCH LABORATORIES; SILICON; SILICON CARBIDE; TECHNOLOGY; THYRISTORS;

EMERGING TECHNOLOGIES; LOW-VOLTAGE (LV); POWER DIODES; PULSE POWER APPLICATIONS; PULSED CURRENT (PC); PULSED POWER SWITCHING; PULSED-POWER; SIC THYRISTORS; SILICON CARBIDE (SIC); SILICON-BASED; U.S. ARMY;

CURRENT DENSITY;

EID: 45149122061     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PPC.2005.300437     Document Type: Conference Paper

References (4)

1. th IEEE International Pulsed Power Conference, June 15-18, 2003, pp. 135-138.
2. "Silicon Carbide Substrates: Product Specifications," Cree, Inc., Durham, NC, Version MAT-CATALOG.00D, Revised Jan. 2005.
3. B. Jayant Baliga, Power Semiconductor Devices. Boston: PWS Publishing Co., 1996.
4. S. H. Ryu, A. K. Agarwal, R. Singh and J. W. Palmour, "3100 V, Asymmetrical, Gate Turn-Off (GTO) Thyristors in 4H-SiC," IEEE Electron Device Letters, vol. 22, pp. 127-129, 2001.