Thermal and Electrical Evaluation of SiC GTOs for Pulsed Power Applications

IEEE Transactions on Plasma Science

Volumn 33, Issue 4, 2005, Pages 1226-1234

  Geil, B R ^a   Bayne, S B ^a   Ibitayo, D ^a   Koebke, M G ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

Gate turn off thyristors (GTOs); pulse power; silicon carbide (SiC); thermal analysis; thermal modeling

Indexed keywords

EID: 85008010184     PISSN: 00933813     EISSN: 19399375     Source Type: Journal    
DOI: 10.1109/TPS.2005.854304     Document Type: Article

References (11)

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