High temperature packaging and pulse testing of parallel sic thyristors

SAE Technical Papers

Volumn , Issue , 2006, Pages

  Geil, Bruce R ^a   Bayne, Stephen B ^a   O'Brien, Heather ^b  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b Berkeley Research Associates   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON CARBIDE;

GATE TURN-OFF THYRISTORS; HIGH-PEAK CURRENTS; HIGH-TEMPERATURE PACKAGING; LOCALIZED TEMPERATURE; PARALLEL DEVICES; REPETITIVE PULSING; RING-DOWN CAPACITOR DISCHARGE CIRCUITS; SILICON CARBIDES (SIC);

THYRISTORS;

EID: 85072417689     PISSN: 01487191     EISSN: 26883627     Source Type: Journal    
DOI: 10.4271/2006-01-3106     Document Type: Conference Paper

References (6)

1. Ryu S. H., Agarwal A. K., Singh R., and Palmour J. W., "3100 V, Asymmetrical, Gate Turn-Off (GTO) Thyristors in 4H-SiC," IEEE Electron Device Letters, vol. 22, pp. 127-129, 2001. (Pubitemid 32296794)
2. Mohan N., Undeland T., and Robbins W., Power Electronics Converters, Applications, and Design, New York: Wiley, 1995, pp. 596-609.
3. Geil B., Ibitayo D., Bayne S., Koebke M., "Thermal and Electrical Evaluation of SiC GTOS for Pulsed Power Applications," Plasma Science, IEEE Transactions on Volume 33, Issue 4, Aug. 2005 Page(s): 1226-1234
4. O'Brien H., Shaheen W., Bayne S. B., "Pulsed Power Switching of a 4 mm × 4 mm SiC Thyristor," 15th IEEE International Pulsed Power Conference, June 13-17, 2005
5. O'Brien H., Shaheen W., Bayne S. B., "Evaluation of a 4 mm × 4 mm SiC GTO at Temperatures up to 150 °C and Varying Pulse Width," 27th IEEE International Power Modulator Symposium, May 14-18, 2006.
6. Geil B. R., Bayne S. B., Ibitayo D., Koebke M. G., "Thermal and Electrical Evaluation of SiC GTOs for Pulsed Power Applications," IEEE Transactions on Plasma Science 33, 2005, 1226-1234.