Dynamic performance of 3.1 kV 4H-SiC asymmetrical GTO thyristors

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1349-1352

  Agarwal, A K ^a   Ivanov, P A ^b   Levinshtein, M E ^b   Palmour, J W ^a   Rumyantsev, S L ^b  

^a Arkansas Power Electronics International Inc   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

GTOs; High temperature; Switch; Thyristors; Turn off gain

Indexed keywords

SWITCHES; TEMPERATURE DISTRIBUTION; THYRISTORS; ALUMINUM; CATHODES; CURRENT DENSITY; DOPING (ADDITIVES); ELECTRIC POTENTIAL; IONIZATION; SILICON CARBIDE; THERMAL EFFECTS;

CATHODE CURRENT DENSITY; GATE TURN-OFF THYRISTORS; GTOS; HIGH TEMPERATURE; SILICON CARBIDES (SIC); TEMPERATURE DEPENDENCE; TEMPERATURE INTERVALS; TURN OFFS; TURN-OFF CURRENT GAIN;

SILICON CARBIDE; THYRISTORS;

EID: 0036435381     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1349     Document Type: Conference Paper

References (3)

1. A. K. Agarwal, S.-H. Ryu, R. Singh, O. Kordina, and J.W. Palmour, Materials Science Forum Vol. 338-342 (2000), p. 1387.
2. Sei-Hyung Ryu, Anant K. Agarwal, Ranbir Singh, and John W. Palmour, IEEE Electron Device Lett., Vol. 22 (2001), p. 127.
3. M. E. Levinshtein, T. T. Mnatsakanov, P. A. Ivanov, A. K. Agarwal, J. W. Palmour, S. L. Rumyantsev, A. G. Tandoev, and S. N. Yurkov, Solid-State Electronics, v. 45, (2001), p. 453.