Wafer temperature measurement in PVD systems using the Co-Si reaction

Microelectronic Engineering

Volumn 50, Issue 1-4, 2000, Pages 495-499

  Van Graven, A M ^a   Wolters, R A M ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT; ELECTROSTATICS; HEAT TRANSFER; INTERFACES (MATERIALS); SILICON WAFERS; VAPOR DEPOSITION;

PHYSICAL VAPOR DEPOSITION (PVD) SYSTEMS;

INTEGRATED CIRCUIT LAYOUT;

EID: 0033639654     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00320-2     Document Type: Article

References (1)

1. Reader A.H., et al. Transition metal silicides in silicon technology. Rep. Prog. Phys. 56:1993;1420.