Volatile CVD precursor for Ni film: Cyclopentadienylallylnickel

Journal of Crystal Growth

Volumn 275, Issue 1-2, 2005, Pages

  Kada, T ^a   Ishikawa, M ^a   MacHida, H ^a,b   Ogura, A ^c   Ohshita, Y ^d   Soai, K ^b  

^a TRI Chemical Laboratory Inc   (Japan)

^b TOKYO UNIVERSITY OF SCIENCE   (Japan)

^c MEIJI UNIVERSITY   (Japan)

^d TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

Author keywords

A1. Impurities; A3. Chemical vapor deposition process; A3. Metalorganic chemical vapor deposition

Indexed keywords

CRYSTAL IMPURITIES; LOW TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROELECTRONICS; NICKEL; ORGANIC COMPOUNDS; THERMOGRAVIMETRIC ANALYSIS; VAPOR PRESSURE;

CHEMICAL VAPOR DEPOSITION PROCESS; MICROELECTRONIC DEVICES; PATTERNED STRUCTURE; PRECURSORS;

THIN FILMS;

EID: 15844376281     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.11.198     Document Type: Conference Paper

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