Highly uniform epitaxial SiC-layers grown in a hot-wall CVD reactor with mechanical rotation

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 187-190

  Schoner A ^a   Konstantinov, A ^a   Karlsson, S ^b   Berge, R ^c  

^a ACREO AB   (Sweden)

^b ADC   (Sweden)

^c Ideon Science Park   (Sweden)

Author keywords

Capacitance voltage measurements; Chemical vapor deposition CVD; Doping uniformity; Epitaxial growth with substrate rotation; Thickness uniformity; Wafer mapping

Indexed keywords

ALUMINUM; CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); NITROGEN; SILICON CARBIDE; VOLTAGE MEASUREMENT; CAPACITANCE; CARRIER CONCENTRATION; EPILAYERS; EPITAXIAL GROWTH; SILICON WAFERS; STATISTICS;

CAPACITANCE VOLTAGE MEASUREMENTS; DOPING UNIFORMITY; EPITAXIAL GROWTH WITH SUBSTRATE ROTATION; THICKNESS UNIFORMITY; WAFER MAPPING; DOPING CONCENTRATION; DOPING VARIATION; EPILAYER THICKNESS; MECHANICAL ROTATION; STANDARD DEVIATION; SUBSTRATE ROTATION;

EPITAXIAL GROWTH; CHEMICAL VAPOR DEPOSITION;

EID: 12244295914     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.187     Document Type: Article

References (2)

1. O. Kordina, C. Hallin, A. Henry, J.P. Bergman, I. Ivanov, A. Ellison, N.T. Son, and E. Janzén; Phys. Stat. Sol. B, 202 (1997), p. 321
2. S. Karlsson, C. Adås, A. Konstantinov, and M.K. Linnarsson; Mat. Sci. Forum, Vols 358-356 (2001), p. 563