Numerical modeling of steady state photoconductivity process in highly crystallized undoped μc-Si:H films

Thin Solid Films

Volumn 515, Issue 19 SPEC. ISS., 2007, Pages 7576-7580

  Ram, Sanjay K ^a   Kumar, Satyendra ^a   Roca i Cabarrocas, P ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY KANPUR   (India)

^b LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

Author keywords

Band structure; Computer simulation; Electrical and electronic properties; Modeling and simulation; Photoconductivity; Silicon; Thin films

Indexed keywords

DOPING (ADDITIVES); MICROSTRUCTURE; MORPHOLOGY; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS;

CORROBORATIVE SIMULATION; LIGHT INTENSITY; TEMPERATURE-DEPENDENT PHOTOCONDUCTIVITY; THERMAL QUENCHING EFFECT;

PHOTOCONDUCTIVITY;

EID: 34547609743     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.01.018     Document Type: Article

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