Metalorganic vapor phase epitaxy growth and study of stress in AlGaN using epitaxial AlN as underlying layer

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 6 A, 2003, Pages

  Kida, Yoshihiro ^a   Shibata, Tomohiko ^a,b   Miyake, Hideto ^a   Hiramatsu, Kazumasa ^a  

^a MIE UNIVERSITY   (Japan)

^b NGK INSULATORS LTD   (Japan)

Author keywords

AlGaN; AlN; High AlN molar fraction; In plane compressive strain; LP MOVPE; Thermal expansion coefficients; Underlying layer

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; STRESS ANALYSIS; THERMAL EXPANSION; X RAY DIFFRACTION ANALYSIS;

ALUMINUM GALLIUM NITRIDE; MOLAR FRACTION;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0042244249     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l572     Document Type: Letter

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