Room temperature operational single electron transistor fabricated by focused ion beam deposition

Journal of Applied Physics

Volumn 102, Issue 2, 2007, Pages

  Karre, P Santosh Kumar ^a,b   Bergstrom, Paul L ^d   Mallick, Govind ^c   Karna, Shashi P ^c  

^a MICHIGAN TECHNOLOGICAL UNIVERSITY   (United States)

^b Michigan Technological University   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB OSCILLATIONS; ROOM TEMPERATURE; SINGLE ELECTRON TRANSISTORS; TUNNEL RESISTANCE;

ION BEAM ASSISTED DEPOSITION; THERMAL EFFECTS; TUNGSTEN; TUNNEL JUNCTIONS;

THIN FILM TRANSISTORS;

EID: 34547560106     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2761837     Document Type: Article

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