Effect of surface roughness on quasi-ballistic transport in nano-scale Ge and Si double-gate MOSFETs

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Volumn , Issue , 2006, Pages 152-154

  Xia, Zhiliang ^a   Du, Gang ^a   Liu, Xiaoyan ^a   Kang, Jinfeng ^a   Han, Ruqi ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BOLTZMANN EQUATION; GERMANIUM; MONTE CARLO METHODS; NANOSTRUCTURED MATERIALS; SILICON; SURFACE ROUGHNESS;

QUANTUM BOLTZMANN EQUATION (QBE); QUASI-BALLISTIC TRANSPORT;

MOSFET DEVICES;

EID: 34547304052     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2006.306124     Document Type: Conference Paper

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