메뉴 건너뛰기




Volumn 6, Issue 4, 1998, Pages 259-263

Easy-to-use surface passivation technique for bulk carrier lifetime measurements on silicon wafers

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL CLEANING; CRYSTALLINE MATERIALS; DEPOSITION; ELECTRIC CORONA; PASSIVATION; PHOTOCONDUCTIVITY; VARNISH;

EID: 0032120639     PISSN: 10627995     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1099-159X(199807/08)6:4<259::AID-PIP215>3.0.CO;2-Z     Document Type: Article
Times cited : (28)

References (14)
  • 1
    • 36549095754 scopus 로고
    • The study of charge carrier kinetics in semiconductors by microwave conductivity measurements
    • M. Kunst and G. Beck, 'The study of charge carrier kinetics in semiconductors by microwave conductivity measurements', J. Appl. Phys., 60, 3558 (1986).
    • (1986) J. Appl. Phys. , vol.60 , pp. 3558
    • Kunst, M.1    Beck, G.2
  • 2
    • 0347285879 scopus 로고
    • Measurement of bulk lifetime and surface recombination velocity by infrared absorption due to pulsed optical excitation
    • Z. G. Ling and P. K. Ajmera, 'Measurement of bulk lifetime and surface recombination velocity by infrared absorption due to pulsed optical excitation', J. Appl. Phys., 69, 519 (1991).
    • (1991) J. Appl. Phys. , vol.69 , pp. 519
    • Ling, Z.G.1    Ajmera, P.K.2
  • 3
    • 0022306789 scopus 로고
    • Measurement of the emitter saturation current by a contactless photoconductivity decay method
    • IEEE, New York
    • D. E. Kane and R. M. Swanson, 'Measurement of the emitter saturation current by a contactless photoconductivity decay method', Proc. 18th IEEE Photovoltaic Specialists Conf., p. 578, IEEE, New York, 1985.
    • (1985) Proc. 18th IEEE Photovoltaic Specialists Conf. , pp. 578
    • Kane, D.E.1    Swanson, R.M.2
  • 5
    • 0027187313 scopus 로고
    • In situ bulk lifetime measurement on silicon with a chemically passivated surface
    • T. S. Horányi, T. Pavelka and P. Tüttö, 'In situ bulk lifetime measurement on silicon with a chemically passivated surface', Appl. Surf. Sci., 63, 306 (1993).
    • (1993) Appl. Surf. Sci. , vol.63 , pp. 306
    • Horányi, T.S.1    Pavelka, T.2    Tüttö, P.3
  • 7
    • 0000020111 scopus 로고    scopus 로고
    • Accurate method for the determination of bulk minority-carrier lifetimes of mono- and multicrystalline silicon wafers
    • J. Schmidt and A. G. Aberle, 'Accurate method for the determination of bulk minority-carrier lifetimes of mono- and multicrystalline silicon wafers', J. Appl. Phys., 81, 6186 (1997).
    • (1997) J. Appl. Phys. , vol.81 , pp. 6186
    • Schmidt, J.1    Aberle, A.G.2
  • 8
    • 0030393529 scopus 로고    scopus 로고
    • Record low surface recombination velocities on low-resistivity silicon solar cell substrates
    • IEEE, New York
    • J. Schmidt, T. Lauinger, A. G. Aberle and R. Hezel, 'Record low surface recombination velocities on low-resistivity silicon solar cell substrates', Proc. 25th IEEE Photovoltaic Specialists Conf., p. 413, IEEE, New York, 1996.
    • (1996) Proc. 25th IEEE Photovoltaic Specialists Conf. , pp. 413
    • Schmidt, J.1    Lauinger, T.2    Aberle, A.G.3    Hezel, R.4
  • 9
    • 3943074854 scopus 로고
    • Corona charging of insulated surfaces and the application in the photovoltaic
    • Stephens, Bedford
    • A. Beyer, M. Rennau and G. Ebest, 'Corona charging of insulated surfaces and the application in the photovoltaic', Proc. 13th European Photovoltaic Solar Energy Conf., p. 1254, Stephens, Bedford, 1995.
    • (1995) Proc. 13th European Photovoltaic Solar Energy Conf. , pp. 1254
    • Beyer, A.1    Rennau, M.2    Ebest, G.3
  • 10
    • 0029307331 scopus 로고
    • Note on the interpretation of injection level dependent surface recombination velocities
    • R. Brendel, 'Note on the interpretation of injection level dependent surface recombination velocities', Appl. Phys. A, 60, 523 (1995).
    • (1995) Appl. Phys. A , vol.60 , pp. 523
    • Brendel, R.1
  • 11
    • 0030087214 scopus 로고    scopus 로고
    • On the data analysis of light-biased photoconductance decay measurements
    • A. G. Aberle, J. Schmidt and R. Brendel, 'On the data analysis of light-biased photoconductance decay measurements', J. Appl. Phys., 79, 1491 (1996).
    • (1996) J. Appl. Phys. , vol.79 , pp. 1491
    • Aberle, A.G.1    Schmidt, J.2    Brendel, R.3
  • 12
    • 0344546107 scopus 로고
    • Light-biased photoconductance decay measurements on silicon-nitride passivated silicon surfaces
    • Stephens, Bedford
    • J. Schmidt, T. Lauinger, A. G. Aberle and R. Hezel, 'Light-biased photoconductance decay measurements on silicon-nitride passivated silicon surfaces', Proc. 13th European Photovoltaic Solar Energy Conf., p. 1287, Stephens, Bedford, 1995.
    • (1995) Proc. 13th European Photovoltaic Solar Energy Conf. , pp. 1287
    • Schmidt, J.1    Lauinger, T.2    Aberle, A.G.3    Hezel, R.4
  • 14
    • 11544340797 scopus 로고
    • Novel method to reduce the surface recombination velocity for the carrier lifetime measurement in silicon wafers
    • W. Arndt, K. Graff and P. Heim, 'Novel method to reduce the surface recombination velocity for the carrier lifetime measurement in silicon wafers', Electrochem. Soc. Proc., 95-30, 44 (1995).
    • (1995) Electrochem. Soc. Proc. , vol.95 , Issue.30 , pp. 44
    • Arndt, W.1    Graff, K.2    Heim, P.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.