A fully-manufacturable 0.5μm SiGe BiCMOS technology for wireless power amplifier applications

2002 32nd European Microwave Conference, EuMC 2002

Volumn , Issue , 2002, Pages 303-306

  Ramachandran, V ^a   Joseph, A J ^a   Johnson, J B ^a   Gallagher, M D ^a   Brandt, P O ^b   Tilly, L ^b   Greenberg, D R ^a   Ansley, W E ^a   Gogineni, U ^a   Harame, D L ^a   Dunn, J S ^a  

^a IBM MICROELECTRONICS   (United States)

^b ERICSSON RESEARCH   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

BICMOS TECHNOLOGY; BISMUTH ALLOYS; INTEGRATED CIRCUIT DESIGN; POWER AMPLIFIERS;

EFFICIENCY REQUIREMENTS; FULLY COMPATIBLE; HIGH BREAKDOWN; MODULE PERFORMANCE; MULTIPLE MODES; SAFE OPERATING AREA; SIGE BICMOS TECHNOLOGY; WIRELESS POWER AMPLIFIERS;

SI-GE ALLOYS;

EID: 84897480385     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMA.2002.339282     Document Type: Conference Paper

References (5)

1. R. Jos, Technology Developments Driving an Evolution of Cellular Phone Power Amplifiers to Integrated RF Front-End Modules, IEEE J. Solid-State Cir., Vol. 36 pp. 1382-1389, September 2001.
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3. D.L. Harame, J.H. Comfort, J.D. Cressler, E.F. Crabbe, J.Y-C. Sun, B.S. Meyerson and T. Tice, Si/SiGe Epitaxial Base Transistors II: Process Integration and Analog Applications, IEEE Trans. Elec. Dev., Vol. 42 pp. 469-482, March 1995.
4. P. Deixler, H, G.A. Huizing, J.J.T.M. Donkers, J.H. Klootwijk, D. Hartskeerl, W.B. De Boer, R.J. Havens, R. Van der Toorn, J.C.J. Paasschens, W.J. Kloosterman, J.G.M. Van Berkum, D. Terpstra and J.W. Slotboom, Explorations for High Performance SiGe-Heterojunction Bipolar Transistor Integration, Proceedings IEEE Bipolar/BiCMOS Circuits and Technology Meeting 2001, pp. 30-33, 2001.
5. K. Schuegraf, M. Racanelli, A. Kalburge, B. Shen, C. Hu, D. Chapek, D. Howard, D. Quon, D. Feiler, D. Dornisch, G. U' Ren, H. AbdulRidha, J. Zheng, J. Zhang, and K. Bell, 0.18,m SiGe BiCMOS Technology for Wireless and 40 Gbls Communication Products, Proceedings IEEE Bipolar/BiCMOS Circuits and Technology Meeting 2001, pp. 147-150, 2001.