Distributed effects in high power RF LDMOS transistors

IEEE MTT-S International Microwave Symposium Digest

Volumn 2005, Issue , 2005, Pages 827-830

  Goverdhanam, Kavita ^a   Dai, Wenhua ^a   Frei, Michel ^a   Farrell, Don ^a   Bude, Jeff ^a   Safar, Hugo ^a   Mastrapasqua, M ^a   Bambridge, Tim ^a  

^a AGERE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISTRIBUTED EFFECTS; OUTPUT POWERS; POWER LOSSES; RF LDMOS TRANSISTORS;

ELECTRIC LINES; ELECTRONICS PACKAGING; MACHINABILITY; MICROWAVES; MOS DEVICES; POWER AMPLIFIERS;

TRANSISTORS;

EID: 33749234996     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2005.1516744     Document Type: Conference Paper

References (8)

1. A. Wood, W. Brakensiek, C. Dragon, W. Burger, "120W, 2GHz, Si LDMOS RF Power Transistor For PCS Base Station Applications", IEEE MTT-S Digest, 1998.
2. S. Xu, A. Shibib, Z. Xie, H. Safar, J. Lott, D. Farrell, M. Mastrapasqua, "High Performance RF Power LDMOSFET Technology for 2.1GHz Power Amplifier Applications", IEEE MTT-S Digest, 2003.
3. J. Jang, O. Tornbald, T. Arnborg, Q. Chen, K. Banerjee, Z.Yu, R.Dutton, "RF LDMOS Characterization and its compact Modeling", IEEE MTT-S Digest, 2001.
4. T. Liang, J. Pla, P. Aaen, M. Mahalingam, "Equivalent-Circuit Modeling and Verification of Metal-Ceramic Packages for RF and Microwave Power Transistors", IEEE Trans on Microwave Theory and Tech., Vol 47, No. 6, June 1999.
5. S. Lee, P. Roblin, O. Lopez, "Modeling of Distributed Parasitics in Power FETs", IEEE Trans on Electron Devices, Vol 49, No. 10, October 2002.
6. A. Abdipour, A. Pacaud, "Complete Sliced Model of Microwave FET's and Comparison with Lumped Model and Experimental Results", IEEE Trans on Microwave Theory and Tech., Vol 44, No. 1, January 1996.
7. Integrand Software, Inc., EMX
8. Agilent Technologies, ADS