A comparison of linear handset power amplifiers in different bipolar technologies

IEEE Journal of Solid-State Circuits

Volumn 39, Issue 10, 2004, Pages 1746-1754

  Nellis, Keith ^a   Zampardi, Peter J ^a  

^a SKYWORKS SOLUTIONS INC   (United States)

Author keywords

Bipolar transistors; Code division multiple access (CDMA); Efficiency; Heterojunction bipolar transistors (HBTs); Linearity; Power amplifiers

Indexed keywords

CODE DIVISION MULTIPLE ACCESS; GLOBAL SYSTEM FOR MOBILE COMMUNICATIONS; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED CIRCUITS; SCATTERING PARAMETERS; SEMICONDUCTING GALLIUM ARSENIDE; SIGNAL RECEIVERS; WIRELESS TELECOMMUNICATION SYSTEMS;

AVERAGE SIGNAL RATIO; BIPOLAR TECHNOLOGY; LINEARITY; WIRELESS HANDSETS;

POWER AMPLIFIERS;

EID: 5444220835     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2004.833761     Document Type: Conference Paper

References (9)

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