Atomistic view of the autosurfactant effect during GaN epitaxy

Physical Review Letters

Volumn 98, Issue 20, 2007, Pages

  King, S T ^a   Weinert, M ^a   Li, L ^a  

^a UNIVERSITY OF WISCONSIN MILWAUKEE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; ELECTROSTATIC FORCE; EPITAXIAL GROWTH; GALLIUM COMPOUNDS; IMAGING TECHNIQUES; SCANNING TUNNELING MICROSCOPY;

AUTOSURFACTANT EFFECTS; BILAYER HEIGHT; CHAIN REACTION; GAN EPITAXY;

SURFACE ACTIVE AGENTS;

EID: 34547242456     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.98.206106     Document Type: Article

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