Electrochemical method for evaluation of structural perfection of hydrogen-terminated Si(111) surface

Japanese journal of applied physics

Volumn 39, Issue 12 A, 2000, Pages

  Bensliman, Fahd ^a   Aggour, Mohammed ^b   Ennaoui, Ahmed ^a   Matsumura, Michio ^c  

^a FACULTÉ DES SCIENCES   (Morocco)

^b IBN TOFAIL UNIVERSITY   (Morocco)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTROCHEMISTRY; HYDROGEN; OXIDATION;

OXYGEN FREE WATER;

SILICON WAFERS;

EID: 0034479467     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l1206     Document Type: Article

References (16)