Low-frequency charge noise in suspended aluminum single-electron transistors

Applied Physics Letters

Volumn 91, Issue 3, 2007, Pages

  Li, T F ^a,b   Pashkin, Yu A ^d   Astafiev, O ^e   Nakamura, Y ^e   Tsai, J S ^e   Im, H ^b,c  

^a TSINGHUA UNIVERSITY   (China)

^b INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^c Dongguk University   (South Korea)

^d LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

^e NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE MEASUREMENT; CHARGE DENSITY; COULOMB BLOCKADE; ELECTRON TRANSPORT PROPERTIES; SPURIOUS SIGNAL NOISE; THERMAL EFFECTS;

ALUMINUM SINGLE-ELECTRON TRANSISTORS; CONVENTIONAL ANGLE EVAPORATION; LOW-FREQUENCY CHARGE NOISE;

TRANSISTORS;

EID: 34547174657     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2759260     Document Type: Article

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