Aluminum Single Electron Transistors with Islands Isolated from the Substrate

Journal of Low Temperature Physics

Volumn 118, Issue 5-6, 2000, Pages 287-296

  Krupenin, V A ^a   Presnov, D E ^a   Zorin, A B ^a,b   Niemeyer, J ^b  

^a MOSCOW STATE UNIVERSITY   (Russian Federation)

^b PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001280707     PISSN: 00222291     EISSN: None     Source Type: Journal    
DOI: 10.1023/a:1004625530034     Document Type: Article

References (19)

1. G. Zimmerli, T. M. Eiles, R. L. Kautz, and J. M. Martinis, Appl. Phys. Lett. 61, 237 (1992).
2. S. M. Verbrugh, Ph.D. thesis, Delft University of Technology, 1995; S. M. Verbrugh, M. L. Benhamadi, E. H. Visscher, and J. E. Mooij, J. Appl. Phys. 78, 2830 (1995).
3. S. M. Verbrugh, Ph.D. thesis, Delft University of Technology, 1995; S. M. Verbrugh, M. L. Benhamadi, E. H. Visscher, and J. E. Mooij, J. Appl. Phys. 78, 2830 (1995).
4. A. B. Zorin, F.-J. Ahlers, J. Niemeyer, T. Weimann, H. Wolf, V. A. Krupenin, and S. V. Lotkhov, Phys. Rev. B 53, 13682 (1996).
5. A. N. Korotkov, D. V. Averin, K. K. Likharev, and S. A. Vasenko, in Single Electron Tunneling and Mesoscopic Devices, edited by H. Koch and H. Lübbig, p.45 (Springer-Verlag, Berlin, 1992).
6. M. W. Keller, J. M. Martinis, A. H. Steinbach, and N. M. Zimmerman, IEEE Trans. on Instrum. and Meas. 46, 307 (1997).
7. V. A. Krupenin, S. V. Lotkhov, D. E. Presnov, A. B. Zorin, F.-J. Ahlers, J. Niemeyer, H. Scherer, T. Weimann, and H. Wolf, Czech. J. Phys. 46, suppl. 4, 2283 (1996).
8. K. K. Likharev, Proceedings of the IEEE, 87, No. 4, 606-632 (1999).
9. V. A. Krupenin, D. E. Presnov, M. N. Savvateev, H. Scherer, A. B. Zorin, and J. Niemeyer, J. Appl. Phys. 48, 3212 (1998).
10. J. Niemeyer, PTB Mitt. 84, 251 (1974); G. J. Dolan, Appl. Phys. Lett. 31, 337 (1977).
11. J. Niemeyer, PTB Mitt. 84, 251 (1974); G. J. Dolan, Appl. Phys. Lett. 31, 337 (1977).
12. V. A. Krupenin, D. E. Presnov, A. B. Zorin, and J. Niemeyer, in 22nd International Conference on Low Temperature Physics (Helsinki, Finland, 1999); to be published in Physica B; http://lt22.hut.fi/cgi/view?id=S11138
13. V. A. Krupenin, D. E. Presnov, A. B. Zorin, and J. Niemeyer, in 22nd International Conference on Low Temperature Physics (Helsinki, Finland, 1999); to be published in Physica B; http://lt22.hut.fi/cgi/view?id=S11138
14. B. Starmark, P. Delsing, D. B. Haviland, and T .Claeson, in 6th International Superconductive Electronics Conference, edited by H. Koch and S. Knappe, Vol. 2, p. 391 (Berlin, Germany, 1997).
15. B. Starmark, T. Henning, T. Claeson, P. Delsing, and A. N. Korotkov, LANL e-Print Archive. [Online.] Available WWW: http://xxx.lanl.gov, cond-mat/9806354, June 1998.
16. A. N. Korotkov, Phys. Rev. B 49, 10381 (1994).
17. We characterize the sensitivity of our devices in terms of equivalent charge noise referred to the transistor island.
18. E. H. Visscher, S. M. Verbrugh, J. Lindermann, P. Hadley and J. E. Mooij, Appl. Phys. Lett. 66, 305 (1995).
19. R. J. Schoelkopf, P. Walgren, A. A. Kozhevnikov, P. Delsing, and D. E. Prober, Science 280, 1238 (1998).