Gate-induced switching and negative differential resistance in a single-molecule transistor: Emergence of fixed and shifting states with molecular length

Journal of Chemical Physics

Volumn 127, Issue 2, 2007, Pages

  Farajian, A A ^a   Belosludov, R V ^b   Mizuseki, H ^b   Kawazoe, Y ^b   Hashizume, T ^c   Yakobson, B I ^a  

^a Rice University   (United States)

^b TOHOKU UNIVERSITY   (Japan)

^c HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY FUNCTIONAL THEORY; GATE DIELECTRICS; GREEN'S FUNCTION; NANOSTRUCTURED MATERIALS; POLYMERS; SWITCHING;

MOLECULAR LENGTH SCALES; NEGATIVE DIFFERENTIAL RESISTANCE; SHIFTING STATES;

FIELD EFFECT TRANSISTORS;

EID: 34547143193     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2748047     Document Type: Article

References (27)

1. A. Aviram and M. A. Ratner, Chem. Phys. Lett. 29, 277 (1974).
2. J. R. Heath and M. A. Ratner, Phys. Today 56 (5), 43 (2003).
3. N. Hush, Nat. Mater. 2, 134 (2003).
4. J. M. Seminario, Nat. Mater. 4, 111 (2005).
5. Y. Q. Feng, R. Q. Zhang, and S. T. Lee, J. Appl. Phys. 95, 5729 (2004).
6. E. Emberly and G. Kirczenow, Phys. Rev. B 62, 10451 (2000).
7. P. Damle, T. Rakshit, M. Paulsson, and S. Datta, IEEE Trans. Nanotechnol. 1, 145 (2002).
8. J. Taylor, H. Guo, and J. Wang, Phys. Rev. B 63, 121104 (R) (2001).
9. F. Ĺonard and J. Tersoff, Phys. Rev. Lett. 88, 258302 (2002).
10. K. M. Indlekofer and J. Knoch, Phys. Rev. B 72, 125308 (2005).
11. M. Di Ventra and N. D. Lang, Phys. Rev. B 65, 045402 (2001).
12. M. Kobayashi, J. Chen, T. C. Chung, F. Moraes, A. J. Heeger, and F. Wuld, Synth. Met. 9, 77 (1984).
13. G. M. Tsivgoulis and J. M. Lehn, Adv. Mater. (Weinheim, Ger.) 9, 39 (1997).
14. R. V. Belosludov, A. A. Farajian, H. Mizuseki, K. Ichinoseki, and Y. Kawazoe, Jpn. J. Appl. Phys., Part 1 43, 2061 (2004).
15. J. A. Merlo and C. D. Frisbie, J. Phys. Chem. B 108, 19169 (2004).
16. M. J. Frisch, G. W. Trucks, H. B. Schlegel, GAUSSIAN 98, Revision A.11.1 2001, Gaussian, Inc., Pittsburgh PA.
17. N. B. Larsen, H. Biebuyck, E. Delamarche, and B. Michel, J. Am. Chem. Soc. 119, 3017 (1997).
18. A. A. Farajian, R. V. Belosludov, H. Mizuseki, and Y. Kawazoe, Thin Solid Films 499, 269 (2006).
19. S. F. Lyuksyutov, P. B. Paramonov, R. A. Sharipov, and G. Sigalov, Phys. Rev. B 70, 174110 (2004).
20. S. F. Lyuksyutov, R. A. Vaia, P. B. Paramonov, S. Juhl, L. Waterhouse, R. M. Ralich, G. Sigalov, and E. Sancaktar, Nat. Mater. 2, 468 (2003).
21. G. Leatherman, E. N. Durantini, D. Gust, T. A. Moore, A. L. Moore, S. Stone, Z. Zhou, P. Rez, Y. Z. Liu, and S. M. Lindsay, J. Phys. Chem. B 103, 4006 (1999).
22. A. A. Farajian, B. I. Yakobson, H. Mizuseki, and Y. Kawazoe, Phys. Rev. B 67, 205423 (2003).
23. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
24. A. Javey, R. Tu, D. B. Farmer, J. Guo, R. G. Gordon, and H. Dai, Nano Lett. 5, 345 (2005).
25. E. Rauly, O. Potavin, F. Balestra, and C. Raynaud, Solid-State Electron. 43, 2033 (1999).
26. N. Singh, A. Agarwal, L. K. Bera, T. Y. Liow, R. Yang, S. C. Rustagi, C. H. Tung, R. Kumar, G. Q. Lo, N. Balasubramanian, and D.-L. Kwong, IEEE Electron Device Lett. 27, 383 (2006).
27. A. A. Farajian, K. Esfarjani, and Y. Kawazoe, Phys. Rev. Lett. 82, 5084 (1999).