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Volumn 253, Issue 21, 2007, Pages 8695-8698
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The analysis of structural and electronic environments of silicon network in HWCVD deposited a-SiC:H films
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Author keywords
HWCVD; Plasmon energy; Raman and XPS; Valence band
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Indexed keywords
AMORPHOUS ALLOYS;
CHEMICAL VAPOR DEPOSITION;
FOURIER TRANSFORM INFRARED SPECTROSCOPY;
RAMAN SPECTROSCOPY;
SILICON ALLOYS;
X RAY PHOTOELECTRON SPECTROSCOPY;
HOT WIRE CHEMICAL VAPOUR DEPOSITION (HWCVD);
PLASMON ENERGY;
SILICON NETWORK;
VALENCE BAND;
THIN FILMS;
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EID: 34547143153
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2007.04.065 Document Type: Article |
Times cited : (5)
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References (14)
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