Influence of in situ annealing on carrier dynamics in InGaAs/GaAs quantum dots

Nanotechnology

Volumn 18, Issue 32, 2007, Pages

  Xu, Zhangcheng ^a   Zhang, Yating ^a   Hvam, Jørn M ^b  

^a NANKAI UNIVERSITY   (China)

^b TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALS; DEFECTS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; WAVE FUNCTIONS;

CARRIER DYNAMICS; CARRIER TUNNELLING; PIEZOELECTRIC FIELDS;

SEMICONDUCTOR QUANTUM DOTS;

QUANTUM DOT;

ARTICLE; CHEMICAL ANALYSIS; DEVICE; FIELD EMISSION; LASER; PHOTOLUMINESCENCE; PIEZOELECTRICITY; POLARIMETRY; PRIORITY JOURNAL; SPECTRAL SENSITIVITY; STRUCTURE ANALYSIS; TEMPERATURE; TEMPERATURE DEPENDENCE; THERMAL ANALYSIS;

EID: 34547093864     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/32/325401     Document Type: Article

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