InGaAs/GaAs quantum-dot-quantum-well heterostructure formed by submonolayer deposition

Nanotechnology

Volumn 14, Issue 12, 2003, Pages 1259-1261

  Xu, Zhangcheng ^a   Leosson, Kristjan ^a   Birkedal, Dan ^a   Lyssenko, Vadim ^a   Hvam, Jørn M ^a   Sadowski, Janusz ^b  

^a TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

^b UNIVERSITY OF COPENHAGEN   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT EMISSION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM WELL LASERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES; THERMAL EFFECTS;

DISCRETE EMISSION LINE; MICRO-PHOTOLUMINESCENCE SPECTRA; SUBMONOLAYER DEPOSITION;

HETEROJUNCTIONS;

EID: 0347654980     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/14/12/005     Document Type: Article

References (14)

1. Alferov Z I 2001 Rev. Mod. Phys. 73 767
2. Shchukin V A, Bimberg D, Malyshkin V G and Ledentsov N N 1998 Phys. Rev. B 57 12262
3. Shchukin V A and Bimberg D 1999 Rev. Mod. Phys. 71 1125
4. Zhukov A F et al 1999 Electron. Lett. 35 1845
5. Mikhrin S S et al 1999 Semicond. Sci. Technol. 14 118
6. Mikhrin S S et al 2002 Proc. of the 26th Int. Conf. on the Physics of Semiconductors (Edinburgh, UK, July-Aug. 2002) vol 29 p L3
7. Xu Z, Birkedal D, Hvam J M, Zhao Z, Liu Y, Yang K, Kanjilal A and Sadowski J 2003 Appl. Phys. Lett. 82 3859
8. Lee H, Yang W and Sercel P C 1997 Phys. Rev. B 55 9757
9. Sanguinetti S, Henini M, Grassi Alessi M, Capizzi M, Frigeri P and Franchi S 1999 Phys. Rev. B 60 8276
10. Lubyshev D I, Gonzalez-Borrero P P, Marega E Jr., Petipres E, La S N Jr. and Basmaji P 1996 Appl. Phys. Lett. 68 205
11. Brusaferri L et al 1996 Appl. Phys. Lett. 69 3354
12. Polimeni A, Patane A, Henini M, Eaves L and Main P C 1999 Phys. Rev. B 59 5064
13. Marzin J Y, Gérard J M, Israël A, Barrier D and Bastard G 1994 Phys. Rev. Lett. 73 716
14. Varshni Y P 1967 Physica 34 149