Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 177-180

  Xu, Z C ^a   Leosson, K ^a   Birkedal, D ^a   Hvam, J M ^a   Sadowski, J ^b   Zhao, Z Y ^c   Chen, X S ^d   Liu, Y M ^c   Yang, K T ^c  

^a TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

^b UNIVERSITY OF COPENHAGEN   (Denmark)

^c ANHUI UNIVERSITY   (China)

^d SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

A1. Nanostructures; A1. X ray diffraction; A3. Molecular beam epitaxy; A3. Semiconducting III V materials

Indexed keywords

ANNEALING; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PHONONS; PHOTOLUMINESCENCE; X RAY DIFFRACTION ANALYSIS;

OPTICAL ANISOTROPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037380528     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02388-6     Document Type: Conference Paper

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