Strain relaxation and critical thickness for epitaxial LaAlO3 thin films grown on SrTiO3(0 0 1) substrates by molecular beam epitaxy

Journal of Crystal Growth

Volumn 306, Issue 1, 2007, Pages 47-51

  Merckling, C ^a,b   El Kazzi, M ^a   Delhaye, G ^a   Favre Nicolin, V ^c,d   Robach, Y ^a   Gendry, M ^a   Grenet, G ^a   Saint Girons, G ^a   Hollinger, G ^a  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b STMICROELECTRONICS   (France)

^c CEA GRENOBLE   (France)

^d UNIV GRENOBLE ALPES   (France)

Author keywords

A1. AFM; A1. RHEED; A1. XRD; A3. MBE; B1. LaAlO3; B2. High dielectrics

Indexed keywords

CRYSTAL GROWTH; FILM THICKNESS; HIGH ENERGY ELECTRON DIFFRACTION; LATTICE CONSTANTS; RELAXATION PROCESSES; STRAIN MEASUREMENT; TITANIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

CRITICAL THICKNESS; PSEUDOMORPHICAL FILM GROWTH;

THIN FILMS;

EID: 34447558119     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.04.048     Document Type: Article

References (18)

1. Buongiorno Nardelli M., Walker F.J., and McKee R.A. Phys. Stat. Sol. (b) 241 (2004) 2279
2. Ohkubo A., Ohtomo A., Nishimura J., Makino T., Segawa Y., and Kawasaki M. Appl. Surf. Sci. 252 (2006) 2488
3. Fuchs D., Adam M., Schweiss P., and Schneider R. J. Appl. Phys. 91 (2002) 5288
4. Ohtomo A., and Hwang H.Y. Nature (London) 427 (2004) 423
5. J.-L. Maurice, C. Carretero, M.-J. Casanove, K. Bouzehouane, S. Guyard, E. Larquet and J.-P. Contour, Arxiv preprint cond-mat/0511123, 2005.
6. Droopad R., Yu Z., Li H., Liang Y., Overgaard C., Demkov A., Zhang X., Moore K., Eisenbeiser K., Hu M., Curless J., and Finder J. J. Crystal Growth 251 (2003) 638
7. Castell M.R. Surf. Sci. 505 (2002) 1
8. Gaillard S., Rozier Y., Merckling C., Ducroquet F., Gendry M., and Hollinger G. Microelectron. Eng. 80 (2005) 146
9. Merckling C., Delhaye G., El-Kazzi M., Gaillard S., Rozier Y., Rapenne L., Chenevier B., Marty O., Saint-Girons G., Gendry M., Robach Y., and Hollinger G. Microelectron. Reliab. 47 (2007) 540
10. Bueble S., Knorr K., Brecht E., and Schmahl W.W. Surf. Sci. 400 (1998) 345
11. Sharma A., Ban Z.-G., Alpay S.P., and Mantese J.V. Pyroelectric Response Ferroelectric Thin Films 95 (2004) 3619
12. Yamada T., Astafiev K.F., Sherman V.O., Tagantsev A.K., Su D., Muralt P., and Setter N. J. Appl. Phys. 98 (2005) 054105
13. de Ligny D., and Richet P. Phys. Rev. B 53 (1996) 3013
14. El-Kazzi M., Merckling C., Delhaye G., Arzel L., Grenet G., Bergignat E., and Hollinger G. Mat. Sci. Semicon. Proc. 9 (2006) 954
15. M. Gendry, G. Hollinger, in: Proceedings of the First International Conference on Semiconductor Heteroepitaxy, Montpellier, France, July 1995.
16. Gendry M., and Hollinger G. J. Crystal Growth 257 (2003) 51
17. Suzuki T., Nishi Y., and Fujimoto M. Philos. Mag. A 79 (1999) 2461
18. Sun H.P., Tian W., Pan X.Q., Haeni J.H., and Schlom D.G. Appl. Phys. Lett. 84 (2004) 3298