Structural and dielectric properties of strain-controlled epitaxial SrTiO 3 thin films by two-step growth technique

Journal of Applied Physics

Volumn 98, Issue 5, 2005, Pages

  Yamada, Tomoaki ^a   Astafiev, Konstantin F ^a   Sherman, Vladimir O ^a   Tagantsev, Alexander K ^a   Su, Dong ^a   Muralt, Paul ^a   Setter, Nava ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH TECHNIQUES; STRAIN RELAXATION; STRUCTURAL PROPERTIES;

CRYSTAL LATTICES; CRYSTALLIZATION; DIELECTRIC RELAXATION; EPITAXIAL GROWTH; HIGH ENERGY ELECTRON DIFFRACTION; PERMITTIVITY; PULSED LASER DEPOSITION; STRAIN; STRONTIUM COMPOUNDS; SUBSTRATES;

THIN FILMS;

EID: 25144488549     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2037211     Document Type: Article

References (27)

1. O. G. Vendik, E. K. Hollman, A. B. Kozyrev, and A. M. Prudan, J. Supercond. 12, 325 (1999).
2. A. K. Tagantsev, V. O. Sherman, K. F. Astafiev, J. Venkatesh, and N. Setter, J. Electroceram. 11, 5 (2003).
3. N. A. Pertsev, A. K. Tagantsev, and N. Setter, Phys. Rev. B 61, R825 (2000).
4. Z. G. Ban and S. P. Alpay, J. Appl. Phys. 91, 9288 (2002).
5. C. L. Canedy, H. Li, S. P. Alpay, L. Salamanca-Riba, A. L. Roytburd, and R. Ramesh, Appl. Phys. Lett. 77, 1695 (2000).
6. H. Li, A. L. Roytburd, S. P. Alpay, T. D. Tran, L. Salamanca-Riba, and R. Ramesh, Appl. Phys. Lett. 78, 2354 (2001).
7. J. H. Haeni, Nature (London) 430, 758 (2004).
8. B. H. Park, E. J. Peterson, Q. X. Jia, J. Lee, X. Zeng, W. Si, and X. X. Xi, Appl. Phys. Lett. 78, 533 (2001).
9. T. Yamada, K. F. Astafiev, V. O. Sherman, A. K. Tagantsev, P. Muralt, and N. Setter, Appl. Phys. Lett. 86, 142904 (2005).
10. W. Y. Uen and T. Nishinaga, J. Cryst. Growth 128, 521 (1993).
11. T. Nishinaga, K. Mizuguchi, N. Hayafuji, and T. Murotani, Jpn. J. Appl. Phys., Part 2 26, L1141 (1987).
12. T. Suzuki, Y. Nishi, and M. Fujimoto, Philos. Mag. A 79, 2461 (1999).
13. K. F. Astafiev, V. O. Sherman, A. K. Tagantsev, N. Setter, T. Rivkin, and D. Ginley, Integr. Ferroelectr. 49, 103 (2002).
14. S. P. Alpay and A. L. Roytburd, J. Appl. Phys. 83, 4714 (1998).
15. S. P. Alpay, V. Nagarajan, A. Bendersky, M. D. Vaudin, S. Aggarwal, R. Ramesh, and A. L. Roytburd, J. Appl. Phys. 85, 3271 (1999).
16. J. S. Speck and W. Pompe, J. Appl. Phys. 76, 466 (1994).
17. J. W. Matthews and A. E. Blakeslee, J. Cryst. Growth 27, 118 (1974).
18. L. S.-J. Peng, X. X. Xi, B. H. Moeckly, and S. P. Alpay, Appl. Phys. Lett. 83, 4592 (2003).
19. For the thermal expansion of LaAl O3, see B. C. Chakoumakos, D. G. Schlom, M. Urbanik, and J. Luine, J. Appl. Phys. 0021-8979 10.1063/1.366925 83, 1979 (1998). For example, average value of thermal expansion coefficient of LaAl O3 between 0 and 300 K and between 300 and 1023 K (750 C) were 4.4× 10-6 K and 10.0× 10-6 K, respectively. For SrTi O3, see F. Lytle, J. Appl. Phys. 0021-8979 10.1063/1.1702820 35, 2212 (1964) (below 300 K) and D. de Ligny and P. Richet, Phys. Rev. B 53, 3013 (1996) (above 300 K).
20. For the thermal expansion of LaAl O3, see B. C. Chakoumakos, D. G. Schlom, M. Urbanik, and J. Luine, J. Appl. Phys. 0021-8979 10.1063/1.366925 83, 1979 (1998). For example, average value of thermal expansion coefficient of LaAl O3 between 0 and 300 K and between 300 and 1023 K (750 C) were 4.4× 10-6 K and 10.0× 10-6 K, respectively. For SrTi O3, see F. Lytle, J. Appl. Phys. 0021-8979 10.1063/1.1702820 35, 2212 (1964) (below 300 K) and D. de Ligny and P. Richet, Phys. Rev. B 53, 3013 (1996) (above 300 K).
21. For the thermal expansion of LaAl O3, see B. C. Chakoumakos, D. G. Schlom, M. Urbanik, and J. Luine, J. Appl. Phys. 0021-8979 10.1063/1.366925 83, 1979 (1998). For example, average value of thermal expansion coefficient of LaAl O3 between 0 and 300 K and between 300 and 1023 K (750 C) were 4.4× 10-6 K and 10.0× 10-6 K, respectively. For SrTi O3, see F. Lytle, J. Appl. Phys. 0021-8979 10.1063/1.1702820 35, 2212 (1964) (below 300 K) and D. de Ligny and P. Richet, Phys. Rev. B 53, 3013 (1996) (above 300 K).
22. K. F. Astafiev, Integr. Ferroelectr. 58, 1371 (2003).
23. K. F. Astafiev, V. O. Sherman, A. K. Tagantsev, N. Setter, T. Kaydanova, and D. Ginley, Appl. Phys. Lett. 84, 2385 (2004).
24. A. B. Kozyrev, V. N. Keis, G. Koepf, R. Yandrofski, O. I. Soldatenkov, K. A. Dudin, and D. P. Dovgan, Microelectron. Eng. 29, 257 (1995).
25. K. F. Astafiev, A. K. Tagantsev, and N. Setter, J. Appl. Phys. 97, 014106 (2005).
26. A. K. Tagantsev, Sov. Phys. JETP 59, 1290 (1984).
27. J. Petzelt, Phys. Rev. B 64, 184111 (2001).