Quasi-SOI MOSFETs - A promising bulk device candidate for extremely scaled era

IEEE Transactions on Electron Devices

Volumn 54, Issue 7, 2007, Pages 1784-1788

  Tian, Yu ^a   Xiao, Han ^a   Huang, Ru ^a   Feng, Chuguang ^b   Chan, Mansum ^b   Chen, Baoqin ^c   Wang, Runsheng ^a   Zhang, Xing ^a   Wang, Yangyuan ^a  

^a PEKING UNIVERSITY   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^c INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

CMOS; Drain induced barrier lowering (DIBL); Quasi SOI; Scaling; Short channel effects (SCEs); SOI; Ultrathin body (UTB)

Indexed keywords

DRAIN-INDUCED BARRIER LOWERING; SHORT-CHANNEL EFFECTS; ULTRATHIN BODY;

CMOS INTEGRATED CIRCUITS; DRAIN CURRENT; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON ON INSULATOR TECHNOLOGY;

MOSFET DEVICES;

EID: 34447324650     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.899401     Document Type: Article

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