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MRS Internet Journal of Nitride Semiconductor Research

Volumn 4, Issue SUPPL. 1, 1999, Pages

Optical and structural properties of AlGaN/GaN quantum wells grown by molecular beam epitaxy

(8) Grandjean, Nicolas a Massies, Jean a Leroux, Mathieu a Laügt, Marguerite a Lefebvre, Pierre b Gil, Bernard b Allègre, Jacques b Bigenwald, Pierre c

a CNRS (France)

b UNIVERSITÉ MONTPELLIER 2 (France)

c UNIVERSITY OF AVIGNON (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; GERMANIUM; LATTICE CONSTANTS; SEMICONDUCTOR LASERS; SINGLE CRYSTALS;

PHOTONIC DEVICES; PSEUDOMORPHIC GROUPS; STRUCTURAL CHARACTERIZATION; WURTZITE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 3442886020 PISSN: 10925783 EISSN: None Source Type: Journal
DOI: 10.1557/s1092578300003665 Document Type: Conference Paper

Times cited : (4)

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