Effect of piezo electric field on emission characteristics in GaN/AlGaN quantum wells

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 644-647

  Honda, Tohru ^a,b   Miyamoto, Tomoyuki ^b   Sakaguchi, Takahiro ^b   Kawanishi, Hideo ^a   Koyama, Fumio ^b   Iga, Kenichi ^b  

^a KOGAKUIN UNIVERSITY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

GaN; Lasers; Piezo effect; Quantum well

Indexed keywords

CHARGE CARRIERS; PIEZOELECTRICITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

GALLIUM NITRIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 18744437954     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00230-9     Document Type: Article

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