Highly resistive CH-doped GaN grown by plasma-assisted metalorganic chemical vapor deposition

Applied Physics Letters

Volumn 68, Issue 7, 1996, Pages 935-937

  Sato, Michio ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

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[No Author keywords available]

Indexed keywords

EID: 0000896229     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116236     Document Type: Article

References (9)

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