Growth of oriented thick films of gallium nitride from the melt

MRS Internet Journal of Nitride Semiconductor Research

Volumn 4, Issue SUPPL. 1, 1999, Pages

  Dyck, Jeffrey S ^a   Kash, Kathleen ^a   Grossner, Michael T ^b   Hayman, Cliff C ^b   Argoitia, Alberto ^b,d   Yang, Nan ^b   Hong, Moon Hi ^b   Kordesch, Martin E ^c   Angus, John C ^b  

^a CASE WESTERN RESERVE UNIVERSITY   (United States)

^b Case Western Reserve University   (United States)

^c OHIO UNIVERSITY   (United States)

^d JDS UNIPHASE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; HIGH TEMPERATURE EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; THIN FILMS;

BUFFER LAYERS; GROWTH MASK; PENDEO-EPITAXY; THIN FILM STRUCTURES;

HETEROJUNCTIONS;

EID: 3442882298     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300002507     Document Type: Conference Paper

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